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AO7404 N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO7404 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V, in the small SOT323 footprint. It can be used for a wide variety of applications, including load switching, low current inverters and low current DC-DC converters.It is ESD protected to 1KV HBM. Standard Product AO7404 is Pb-free (meets ROHS & Sony 259 specifications). AO7404L is a Green Product ordering option. AO7404 and AO7404L are electrically identical.
Features
VDS (V) = 20V ID = 1 A (VGS = 4.5V) RDS(ON) < 225m (VGS = 4.5V) RDS(ON) < 290m (VGS = 2.5V) RDS(ON) < 425m (VGS = 1.8V)
SC-70 (SOT-323) Top View G D S G
D
S
Absolute Maximum Ratings TA=25C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A
B
Maximum 20 8 1 0.75 5 0.35 0.22 -55 to 150
Units V V A
TA=25C TA=70C TA=25C TA=70C ID IDM PD TJ, TSTG
W C
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C
Symbol t 10s Steady-State Steady-State RJA RJL
Typ 300 340 280
Max 360 425 320
Units C/W C/W C/W
Alpha Omega Semiconductor, Ltd.
AO7404
Electrical Characteristics (T J=25C unless otherwise noted) Symbol Parameter Conditions ID=250A, VGS=0V VDS=16V, VGS=0V TJ=55C VDS=0V, VGS=8V VDS=VGS ID=250A VGS=4.5V, VDS=5V VGS=4.5V, ID=1A RDS(ON) Static Drain-Source On-Resistance TJ=125C VGS=2.5V, ID=0.85A VGS=1.8V, ID=0.7A gFS VSD IS Forward Transconductance VDS=5V, ID=1A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current 0.4 5 186 262 241 326 2.6 0.69 1 0.4 101 VGS=0V, VDS=10V, f=1MHz VGS=0V, VDS=0V, f=1MHz 17 14 3 1.57 VGS=4.5V, VDS=10V, ID=1A 0.13 0.36 3.2 VGS=5V, VDS=10V, RL=10, RGEN=6 IF=1A, dI/dt=100A/s 4 15.5 2.4 6.7 1.6 225 315 290 425 0.55 Min 20 1 5 25 0.8 Typ Max Units V A A V A m m m S V A pF pF pF nC nC nC ns ns ns ns ns nC
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr tD(off) tf trr Qrr Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time
Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=1A, dI/dt=100A/s
A: The value of R JA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating. Rev 3 : Aug 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO7404
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10 8 4V ID (A) ID(A) 6 4 2 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics 480 Normalized On-Resistance 440 400 RDS(ON) (m) 360 320 280 240 200 160 0 1 2 3 4 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 480 440 400 RDS(ON) (m) 360 IS (A) 320 280 240 200 160 1 2 3 4 5 6 7 8 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 25C 125C ID=1A 1E-01 1E-02 25C 1E-03 1E-04 1E-05 0.0 0.4 0.8 1.2 1.6 2.0 VSD (Volts) Figure 6: Body-Diode Characteristics 1E+01 1E+00 125C VGS=2.5V VGS=1.8V 1.8 VGS=1.8V 1.6 1.4 VGS=4.5V 1.2 1 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature ID=1A VGS=2.5V ID=0.85A ID=0.7A 3.5V 3V 2.5V VGS=2V 1 4 8V 5V 3 VDS=5V 25C 125C 2
0 0 0.5 1 1.5 2 2.5 3 VGS(Volts) Figure 2: Transfer Characteristics
VGS=4.5V
Alpha & Omega Semiconductor, Ltd.
AO7404
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5 4 VGS (Volts) 3 2 1 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Qg (nC) Figure 7: Gate-Charge Characteristics VDS=10V ID=1A 200
Capacitance (pF)
150
Ciss
100 Coss 50 Crss
0 0 5 10 15 20 VDS (Volts) Figure 8: Capacitance Characteristics
100.0 TJ(Max)=150C TA=25C 10.0 RDS(ON) limited 10s 100s 0.1s 1.0 1s 10s 0.1 0.1 1 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 DC 10ms 1ms
16
TJ(Max)=150C TA=25C
12 Power (W)
ID (Amps)
8
4
0 0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
10 ZJA Normalized Transient Thermal Resistance
D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=360C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
PD Ton Single Pulse
T
0.01 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.

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